An Analytical Model for the Electron Velocity Overshoot Effects in Strained-Si/sub x/ on Si/sub x/Ge - Electron Devices, IEEE Transactions on
نویسندگان
چکیده
We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on SixGe1 x MOSFET’s with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model.
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